| 摘要 |
An organic thin film transistor is provided to reduce damage of a source/drain electrode in patterning an organic semiconductor using a laser beam by forming a source/drain electrode of a dual structure. A source/drain electrode(140a,140b) is insulated from a gate electrode(120). An organic semiconductor layer(160) is insulated from the gate electrode wherein a predetermined portion of the organic semiconductor layer is patterned to be electrically connected to the source/drain electrode. A passivation layer(150a,150b) is formed on the source/drain electrode. The organic semiconductor layer formed on the passivation layer can be patterned by irradiating a laser beam. The source/drain electrode can include at least one of gold, platinum or palladium.
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