发明名称 Semiconductor device and method of manufacturing the same
摘要 A method of manufacturing a semiconductor device includes the steps of forming barrier metals on first electrodes provided on a chip of the semiconductor device, implementing a predetermined test on the semiconductor device by applying a signal to the semiconductor device via at least one of the barrier metals, and forming second protruded electrodes on the barrier metals. The predetermined tests are implemented before forming second protruded electrodes on the barrier metals.
申请公布号 US7276386(B2) 申请公布日期 2007.10.02
申请号 US20040914235 申请日期 2004.08.10
申请人 FUJITSU LIMITED 发明人 MIYATA KATSUMI;WATANABE EIJI;YODA HIROYUKI
分类号 H01L21/00;H01L21/44;H01L21/60;H01L21/66 主分类号 H01L21/00
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