发明名称 |
Method for manufacturing active matrix type liquid crystal display device comprising annealing of the passivation film |
摘要 |
A TFT and a passivation film are formed on a transparent substrate and thereafter the passivation film is annealed. When measuring drain currents of a TFT at a fixed turn-on voltage (Von) and a fixed turn-off voltage (Voff), although performance of a TFT annealed (solid line) rarely changes, performance of a TFT not annealed (dashed line) changes to a large extent, in more detail, drain current drastically decreases in accordance with the change of TFT performance. This phenomenon means that on-resistance of a TFT not annealed is being increased to a great extent.
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申请公布号 |
US7277152(B2) |
申请公布日期 |
2007.10.02 |
申请号 |
US20020173897 |
申请日期 |
2002.06.18 |
申请人 |
NEC LCD TECHNOLOGIES, LTD. |
发明人 |
SAKAMOTO MICHIAKI;YAMAGUCHI YUICHI |
分类号 |
G02F1/13;G02F1/1368;G02F1/1333;G02F1/136;G02F1/1362;G09F9/00;G09F9/30;G09F9/35;H01L21/336;H01L29/786 |
主分类号 |
G02F1/13 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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