| 摘要 |
<p>A multi-layer insulating thin film is provided to minimize generation of tunneling of electrons by forming the multi-layer insulating thin film containing a high dielectric insulating film having a big energy barrier against electrons. A multi layer insulating thin film is formed between a FG(Floating Gate) and a CG(Control Gate) of a flash memory device. The multi layer insulating thin film is comprised by a silicate thin film, an insulating thin film having a high-k and a SiO2 thin film. The silicate thin film is formed by laminating the one selected from a group consisting of AlSixOy, LaSixOy and ZrSixOy. A thickness of the silicate thin film is made up of 5 nm to 30 nm, and is formed by performing the CVD, ALD(Automic Layer Deposition) or annealing process.</p> |
