发明名称 |
Semiconductor structure with improved on resistance and breakdown voltage performance |
摘要 |
A lateral FET cell is formed in a body of semiconductor material. The lateral FET cell includes a super junction structure formed in a drift region between a drain contact and a body region. The super junction structure includes a plurality of spaced apart filled trenches bounding in part a multiplicity of striped doped regions having opposite or alternating conductivity types.
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申请公布号 |
US7276766(B2) |
申请公布日期 |
2007.10.02 |
申请号 |
US20050193725 |
申请日期 |
2005.08.01 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, L.L.C. |
发明人 |
TU SHANGHUI LARRY;ADAMS JAMES;QUDDUS MOHAMMED;NAIR RAJESH S. |
分类号 |
H01L29/76;H01L29/94;H01L31/00 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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