发明名称 POWER AMPLIFIER CIRCUIT REDUCING EMI
摘要 A power amplifier circuit reducing EMI(Electro Magnetic Interference) is provided to reduce the EMI by implementing a plurality of pull-up transistors, pull-down transistors, and a delay circuit. A power amplifier circuit reducing EMI includes a power transistor unit(30). The power transistor unit(30) generates an output signal based on a predetermined pulse width modulation signal. The power transistor unit(30) has a plurality of transistors, and a delay circuit unit which drives the plurality of transistors at predetermined time intervals based on the pulse width modulation signal. The plurality of transistors include a plurality of pull-up transistors(P1-Pn) sequentially turned on based on the pulse width modulation signal, and a plurality of pull-down transistors(N1-Nn) sequentially turned on based on the pulse width modulation signal.
申请公布号 KR20070096126(A) 申请公布日期 2007.10.02
申请号 KR20060003873 申请日期 2006.01.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JONG HAENG
分类号 H03F3/217 主分类号 H03F3/217
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