| 摘要 |
<p>A semiconductor device and a fabricating method thereof are provided to prevent a stacked insulating layer and an applied insulating layer from peeling off. A trench(11) is formed on a surface of a substrate(10), and a stacked insulating layer(121) is formed on a surface of an inner wall of the trench. An applied insulating layer is formed on the stacked insulating layer, and has film density lower than that of the stacked insulating layer. An intermediate insulating is formed between the stacked insulating layer and the applied insulating layer, and has a film density within a range of the film densities of the stacked and applied insulating layers.</p> |
