发明名称 |
Vacuum plasma processor including control in response to DC bias voltage |
摘要 |
A plasma processor chamber includes a bottom electrode and a top electrode assembly having a center electrode surrounded by a grounded electrode. RF excited plasma between the electrodes induces a DC bias on them. A measure of the bottom electrode DC bias controls the capacitance of a first series resonant circuit connected between the center electrode and ground. A measure of the center electrode DC bias controls the capacitance of a second series resonant circuit connected between the bottom electrode and ground.
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申请公布号 |
US7276135(B2) |
申请公布日期 |
2007.10.02 |
申请号 |
US20040855707 |
申请日期 |
2004.05.28 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
DHINDSA RAJINDER;KOZAKEVICH FELIX;TRUSSELL DAVE |
分类号 |
C23F1/00;H01J37/32 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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