| 摘要 |
A method for fabricating an SIMOX(Separation by Implanted Oxygen) wafer is provided to improve the surface roughness of the wafer by setting an amount of oxygen to a range of 3 to 10 volume% in an annealing atmosphere. A surface of a Si substrate is implanted by oxygen ions, and then the substrate is subjected to high-temperature annealing under conditions, in which an atmosphere in at least an end stage of the high-temperature annealing is Ar or N2 atmosphere containing oxygen in the range of 3 volume% to 10 volume%. The high-temperature annealing is carried out at a temperature of 1290 deg.C to 1380 deg.C for 5 to 40 hours.
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