SEMICONDUCTOR MEMORY DEVICE

摘要

A semiconductor memory device is provided to utilize channel regions formed in each pair of fins corresponding to one gate as a conductive path for electric charges. At least a pair of fins(21a,21b) protrude from a substrate, and are spaced apart from each other. Insulating layers(22,23) are formed between the fins, and a storage node(26) is formed on the fins and a surface of a portion of the insulating layer. A gate electrode(27) is formed on the storage node. A source and a drain are formed on the fins, and a pair of channel regions are formed on inner surfaces of the fins between the source and drain. Widths of the fins contacting the storage node are smaller than those of the fins in a region where the source and the drain are formed.