| 摘要 |
A semiconductor memory device for detecting a repair state in a multi chip package is provided to check an address repaired in the multi chip package and to check the success of repair, by outputting repair information to a DQ using an anti fuse repair test mode. A flag signal generation part(10) generates a flag signal in response to anti fuse repair signals having repair information as to addresses inputted to check a repair state in a test mode. A transfer signal generation part(20) generates a first and a second transfer signal by delaying and inverting a data input/output strobe signal generated in a read operation. An output part(30) outputs the flag signal to the outside through a data output line by synchronizing the flag signal to the first and the second transfer signal.
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