| 发明名称 |
A NOVEL METHOD TO MAKE CORNER CROSS-GRID STRUCTURES IN COPPER METALLIZATION |
| 摘要 |
<p>A new method to prevent cracking at the corners of a semiconductor die during dicing is described. Dummy metal structures are fabricated at the corners of the die to prevent cracking. The design for the dummy metal structures can be generated automatically by a computer program.</p> |
| 申请公布号 |
SG135209(A1) |
申请公布日期 |
2007.09.28 |
| 申请号 |
SG20070063738 |
申请日期 |
2005.01.24 |
| 申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
TAN PATRICK;CHOK TEE KHENG;VIGAR DAVID |
| 分类号 |
H01L21/301;H01L21/44;H01L21/46;H01L21/78 |
主分类号 |
H01L21/301 |
| 代理机构 |
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代理人 |
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| 主权项 |
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