III-NITRIDE SEMICONDUCTOR THIN FILM AND III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A III-nitride semiconductor thin film and a III-nitride semiconductor light emitting device are provided to use the III-nitride semiconductor thin film as a base layer of a GaN-based compound. A recessed groove is formed on a surface of a substrate(110), and a buffer layer(120) made of III-nitride is positioned on the substrate. An epitaxial growth layer made of gallium nitride is positioned on the buffer layer. An intermediate layer(130) is formed on the buffer layer, and has at least two layers consisting of a first metal layer and a second nitrogen layer. The intermediate is made of Al/In/Ga/N, and the buffer layer is made of AlInN.