| 摘要 |
A method for manufacturing a semiconductor device is provided to enhance characteristics and yield of the semiconductor device by improving a sector erase fail in a flash memory device. An interlayer dielectric(22) is formed on a substrate on which a predetermined lower layer is formed. A trench for exposing the substrate is formed by etching selectively the interlayer dielectric. A barrier metal(23b) having a predetermined thickness is formed on both edges of a bottom part of the trench by using an IMP method for applying predetermined AC bias power. The barrier metal is formed with a stacked structure of titanium and titanium nitride layer. The predetermined AC bias power corresponds to 200 to 500W. The titanium is deposited under conditions of DC power of 1.5 to 3.0W, RF power of 1.5 to 3.0W, AC bias power of 00 to 150W, and chamber pressure of 10 to 50mTorr.
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