| 摘要 |
A nitride semiconductor device, such as a nitride semiconductor luminescent device or transistor device, obtained by without forming of an amorphous low-temperature buffer layer, forming a single crystal layer of nitride semiconductor having both of its a-axis and c-axis aligned directly on a substrate and effecting epitaxial growth of a nitride semiconductor layer on the single crystal layer; and a method of directly growing such a nitride semiconductor single crystal layer. In the growing of nitride semiconductor layer (3) on substrate (1) not adapted to lattice matching of nitride semiconductor, buffer layer (2) of a single crystal of Al xGayIn1-x-yN (0<=x<=1, 0<= y<=1 and 0<=x+y<=1) having its a-axis and c-axis aligned is directly formed on the substrate (1) and epitaxial growth of nitride semiconductor layer (3) is carried out on the buffer layer (2) of the single crystal. This buffer layer of the single crystal can be formed by the use of PLD process.
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