发明名称 WAFER PROCESSING METHOD
摘要 <p>A laser beam processing method for processing a wafer by applying a laser beam to a predetermined area, comprising the steps of forming a resin film which absorbs a laser beam, on the surface to be processed of the wafer; applying a laser beam to the surface to be processed of the wafer through the resin film; and removing the resin film after the laser beam application step.</p>
申请公布号 SG135043(A1) 申请公布日期 2007.09.28
申请号 SG20040072153 申请日期 2004.11.16
申请人 DISCO CORPORATION 发明人 GENDA SATOSHI;YOSHIKAWA TOSHIYUKI;OBA RYUGO;FURUTA KENJI;KITAHARA NOBUYASU
分类号 B23K26/00;B23K26/18;B23K26/40;B23K101/40;H01L21/00;H01L21/301;H01L21/44;H01L21/78;(IPC1-7):H01L21/78 主分类号 B23K26/00
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