| 摘要 |
A nitride semiconductor laser device and a manufacturing method thereof are provided to extend a lifetime of the laser diode by effectively reducing a stress, which is applied on an interface between a first protective film and a ridge. A nitride semiconductor laser device includes a substrate(10), nitride semiconductor layers(11,13), a first protective film(16), and an electrode(17). The nitride semiconductor layers are laminated on the substrate and include a ridge(14) on a surface thereof. The first protective film is coated on the nitride semiconductor layers. The electrode is formed on the ridge and the first protective film. The first protective film coats a portion of the nitride semiconductor layer in a contact state. The first protective film coats from a ridge base to a ridge side in a non-contact state. A pore is arranged from the ridge side to the ridge base. |
