| 摘要 |
A substrate processing apparatus, a deposit monitoring apparatus, and a deposit monitoring method are provided to enhance reproducibility of a plasma process by monitoring contamination of a deposit in real time. A substrate processing apparatus includes a processing chamber for performing a predetermined treatment process to a processing target substrate and a deposit monitoring apparatus(50) for monitoring a deposit attached to an inner wall surface of the processing chamber. The deposit monitoring apparatus includes a first conductor(60a) having at least a part disposed in the processing chamber, a second conductor(60b) separated from the first conductor, and a sensor connected to the first conductor and the second conductor in order to obtain data related to capacitance between the first conductor and the second conductor. The sensor includes a capacitance meter(70) for measuring a capacitance value between the first conductor and the second conductor.
|
