FIN FET AND METHOD FOR FABRICATING THE SAME

摘要

A fin field effect transistor and its manufacturing method are provided to increase the mobility of a carrier by enclosing an active pattern with a stress inducing layer. An active pattern(105) protrudes from a surface of a semiconductor substrate(100), and extends in a first direction, and a first hard mask pattern(120) is formed on the active pattern. An isolation film(140) is formed on the substrate in such a way that a portion of the active pattern protrudes. A stress inducing layer(130) is disposed between the isolation film and the active pattern. A gate structure(165) extends in a second direction to enclose the protruded portion of the active pattern and the first hard mask pattern.