| 摘要 |
IN A SURFACE-GRINDING METHOD FOR A WORKPIECE W, FOR EXAMPLE A SEMICONDUCTOR WAFER, IT IS POSSIBLE TO CORRECT OR IMPROVE WAVINESS AND BOW AND TO OBTAIN A SEMICONDUCTOR WAFER HAVING NO THICKNESS DISPERSION. BESIDES, WAFER PROCESSING TO HIGHER PRECISION THAN THAT CONVENTIONALLY ATTAINED IS ACHIEVED AND AT SAME TIME SIMPLIFICATION OF THE PROCESSING METHOD AND THEREBY REDUCTION OF THE COST ARE ALSO ACHIEVED. IN THE PRESENT INVENTION, WHILE THE WORKPIECE SW IS FIXED FOR SUPPORTING BY ONE SURFACE OF ITS OWN BY THE FIXEDLY SUPPORTING MEANS 12 OF A SURFACE-GRINDING APPARATUS 20, THE OTHER SURFACE OF THE WORKPIECE SW IS SURFACE-GROUND, WHERE THE WORKPIECES SW ADHERES ON THE UPPER SURFACE OF A BASE PLATE 14 BY THE AID OF ADHESIVE MATERIAL Y AND THE BASE PLATE 14 IS FIXEDLY SUPPORTED BY THE LOWER SURFACE OF ITS OWN ON THE FIXEDLY SUPPORTING MEANS 12.
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