发明名称 |
INSULATION STRUCTURE FOR HIGH THERMAL CONDITION AND ITS MANUFACTURING METHOD |
摘要 |
<p>An insulation structure for a high temperature process and a method for manufacturing the same are provided to improve the thermal transfer characteristic of a metal oxide insulation layer by using a metal oxide layer which is formed by an anodizing method, as an insulation layer. An insulation structure for a high temperature process includes a conductive member(11), and a metal oxide layer pattern(15). A conductive pattern(13) for electric connection of an element is formed on at least one plane of the conductive member(11). The metal oxide layer pattern(15) of one selected from a group of Al, Ti and Mg is formed on a predetermined position of the conductive pattern(13) by an anodizing method. The element is one of a power chip or an LED(Light Emitting Diode) element.</p> |
申请公布号 |
KR20070095145(A) |
申请公布日期 |
2007.09.28 |
申请号 |
KR20060025454 |
申请日期 |
2006.03.20 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
LEE, YOUNG KI;CHOI, SEOG MOON;SHIN, SANG HYUN |
分类号 |
H05K1/05;H01L23/02 |
主分类号 |
H05K1/05 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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