发明名称 INSULATION STRUCTURE FOR HIGH THERMAL CONDITION AND ITS MANUFACTURING METHOD
摘要 <p>An insulation structure for a high temperature process and a method for manufacturing the same are provided to improve the thermal transfer characteristic of a metal oxide insulation layer by using a metal oxide layer which is formed by an anodizing method, as an insulation layer. An insulation structure for a high temperature process includes a conductive member(11), and a metal oxide layer pattern(15). A conductive pattern(13) for electric connection of an element is formed on at least one plane of the conductive member(11). The metal oxide layer pattern(15) of one selected from a group of Al, Ti and Mg is formed on a predetermined position of the conductive pattern(13) by an anodizing method. The element is one of a power chip or an LED(Light Emitting Diode) element.</p>
申请公布号 KR20070095145(A) 申请公布日期 2007.09.28
申请号 KR20060025454 申请日期 2006.03.20
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 LEE, YOUNG KI;CHOI, SEOG MOON;SHIN, SANG HYUN
分类号 H05K1/05;H01L23/02 主分类号 H05K1/05
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