BIT-LINE EQUALIZER AND SEMICONDUCTOR MEMORY DEVICE COMPRISING IT, AND METHOD FOR MANUFACTURING THE BIT-LINE EQUALIZER

摘要

A bit line equalizer and a semiconductor memory device comprising the same, and a method for fabricating the bit line equalizer are provided to change the width of an equalizer transistor regardless of pitch of a memory cell. In a bit line equalizer(300) precharging and/or equalizing bit line pairs of a semiconductor memory device, a first and a second gate poly(GP1,GP2) are formed in a first direction to be adjacent with each other. A plurality of equalize transistors is formed in a second direction along the first gate poly and the second gate poly, and equalizes a corresponding bit line pair. The equalize transistors are formed in turn, being adjacent to the first gate poly and the second gate poly.