GROUP III NITRIDE SEMICONDUCTOR OPTICAL ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor laser having a stably high COD level by restricting the shape abnormality of an end surface light emitter due to cleavage, and capable of performing a low-voltage operation.

SOLUTION: The group III nitride semiconductor optical element includes: a current constriction layer 308 where a stripe opening for current injection is arranged between a p-type cladding layer 309 and an active layer 305. The current constriction layer 308 is also formed in the upper part of a light emitter in the neighborhood of an end surface to be formed by cleavage.

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