| 摘要 |
TO PROVIDE A SEMICONDUCTOR LASER DEVICE WHICH HAS NO RIPPLE AND CAN AFFORD BETTER FFP HAVING A PATTERN NEAR A GAUSSIAN DISTRIBUTION UPON OPERATION AT THE HIGH OUTPUT, THE SEMICONDUCTOR LASER COMPRISING A LAMINATE STRUCTURE (100) IN WHICH A FIRST CONDUCTIVE TYPE SEMICONDUCTOR LAYER (1), AN ACTIVE LAYER (3) AND A SECOND CONDUCTIVE TYPE SEMICONDUCTOR LAYER (2) DIFFERENT FROM THE FIRST CONDUCTIVE TYPE ARE LAMINATED IN THIS ORDER, THE LAMINATE STRUCTURE HAVING A WAVEGUIDE REGION TO GUIDE A LIGHT AND RESONATOR PLANES FOR LASER OSCILLATION ON BOTH ENDS,CHARACTERIZED IN THAT THE LAMINATE STRUCTURE (100) HAS A NON-RESONATOR PLANE ON ONE END SIDE AND THE NON-RESONATOR PLANE IS COVERED WITH A SHADING LAYER (9).(FIG 13C)
|
