INTERCONNECT STRUCTURE, SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING INTERCONNECT STRUCTURE (FORMATION OF OXIDATION-RESISTANT SEED LAYER FOR INTERCONNECT USAGE)

摘要

PROBLEM TO BE SOLVED: To provide an interconnect structure of a single or dual/damascene type which substantially reduces the surface oxidation problem of plating a conductive material onto a noble metal seed layer, and a method of forming the same. SOLUTION: According to this structure, a hydrogen plasma treatment is used in order to treat the noble metal seed layer, so that the treated noble metal seed layer is very highly resistant to surface oxidation. This oxidation-resistant noble metal seed layer has a low C content or a low nitrogen content, or the both. COPYRIGHT: (C)2007,JPO&INPIT