METHOD FOR DEPOSITING COPPER OXIDE THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide copper oxide thin films having different Seebeck coefficients and resistivities without changing the distance between a substrate with the copper oxide thin film deposited thereon and an evaporation source. SOLUTION: A copper oxide thin film is deposited on a substrate 8 by a physical vapor deposition method. Oxygen gas is introduced into a vacuum chamber 2 with at least Cu being an evaporation source 10. Cu as the evaporation source 10 is evaporated in oxygen plasma, and by changing the introduction flow rate of oxygen gas, the copper oxide thin films having different Seebeck coefficients and resistivities are deposited on the substrate 8. COPYRIGHT: (C)2007,JPO&INPIT