Method of fabricating nitride-based semiconductor light-emitting device and nitride-based semiconductor light-emitting device

摘要

A method of fabricating a nitride-based semiconductor light-emitting device capable of suppressing reduction of characteristics and a yield is obtained. This method of fabricating a nitride-based semiconductor light-emitting device comprises steps of forming a groove portion on a nitride-based semiconductor substrate by selectively removing a prescribed region of a second region of the nitride-based semiconductor substrate other than a first region corresponding to a light-emitting portion of a nitride-based semiconductor layer up to a prescribed depth and forming the nitride-based semiconductor layer having a different composition from the nitride-based semiconductor substrate on the first region and the groove portion of the nitride-based semiconductor substrate.