| 摘要 |
System and Method for Semiconductor Device Fabrication Using Modeling System and method for using adjustment patterns as well as physical parameters as targets to control mask structure dimensions using optical proximity correction. A preferred embodiment includes defining targets based on definition rules and adjusting mask layer structures based on the targets. The targets comprise structures that are visible in the reproduced pattern as well as targets that affect geometric properties. The targets that affect geometric properties include target sacrificial structures that are selected from one or more of the following groups: actual sacrificial structures that are visible only in an intermediate exposure of the reproduced pattern, virtual sacrificial structures of a mask layer having at least one dimension smaller than a minimum dimension required for resolution, and virtual sacrificial structures not part of the reproduced pattern. Furthermore, targets that affect physical properties, such as light intensity, can be defined and utilized in the adjusting.
|
