| 摘要 |
A fabrication method for a nonvolatile semiconductor memory forming gate insulating films for a memory cell transistor and a select gate transistor on a semiconductor substrate, forming a floating gate for the memory cell transistor and a gate electrode for the select gate transistor, forming a cap insulating film for the floating gate, forming a device isolating region, depositing an inter-gate insulating film between the floating gate and control gates for the memory cell transistor, forming a control gate for the memory cell transistor and a gate interconnect for the select gate transistor, forming a salicide control insulating film across the entire surface of the device, and selectively removing the salicide control insulating film on the control gate and on an exposed surface of the semiconductor substrate.
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