发明名称 |
Nonvolatile semiconductor memory device |
摘要 |
A semiconductor layer having a channel formation region provided between a pair of impurity regions spaced from each other is provided, and a first insulating layer a floating gate, a second insulating layer, and a control gate are provided above the semiconductor layer. The semiconductor material forming the floating gate preferably has a band gap smaller than that of the semiconductor layer. The band gap of a channel formation region in the semiconductor material forming the floating gate is preferably smaller than that of the semiconductor layer by 0.1 eV or more.
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申请公布号 |
US2007221971(A1) |
申请公布日期 |
2007.09.27 |
申请号 |
US20070723481 |
申请日期 |
2007.03.20 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;ASAMI YOSHINOBU;TAKANO TAMAE;FURUNO MAKOTO |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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