发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device with high reliability in connection, in which the reduction in size and thickness is possible and the impact of thermal stress is small, and to provide a method for manufacturing it. <P>SOLUTION: The semiconductor device consists of a semiconductor chip 1 which has a projecting connection terminal 2, an external terminal 4 which is directly connected to the connecting terminal of the semiconductor chip 1, and a resin which seals the semiconductor chip. The external terminal 4 is formed closely along an outline side formed by the sealing resin 3. A thermosetting resin can be used as the resin, and the thermosetting resin may contain an inorganic filler. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007251197(A) 申请公布日期 2007.09.27
申请号 JP20070129775 申请日期 2007.05.15
申请人 HITACHI CHEM CO LTD 发明人 ENOMOTO TETSUYA;NAKAMURA HIDEHIRO;INOUE FUMIO;MORIIKE MICHIO;HIROKI TAKANORI
分类号 H01L23/12;H01L25/10;H01L25/11;H01L25/18 主分类号 H01L23/12
代理机构 代理人
主权项
地址