| 摘要 |
PROBLEM TO BE SOLVED: To efficiently manufacture on the same semiconductor substrate a high breakdown voltage LOCOS offset transistor with a structure having no off leakage current by providing no LDD region and a regular low breakdown voltage transistor with a structure having no off leakage current by providing an LDD region. SOLUTION: The semiconductor device has on a semiconductor substrate 1 at least one LOCOS offset transistor 29 or 31 and at least one regular transistor 15 or 17, wherein the LOCOS offset transistor does not have an LDD region between the channel and source and the channel and drain, while the regular transistor has an LDD region between the channel and source and the channel and drain. The LDD region is composed of two kinds of low concentration diffusion layer regions with different conductivity types. By providing no LDD region on the LOCOS offset transistor and providing an LDD region on the regular transistor, the two can have no off leakage current. COPYRIGHT: (C)2007,JPO&INPIT
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