METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To fully employ a merit of using high dielectric material for a gate insulating film efficiently, as well as to form a good quality interface layer between a high dielectric ratio gate insulating film and a semiconductor substrate. SOLUTION: The manufacturing method of an MIS type semiconductor device using a high dielectric ratio gate insulating film comprises: a step of forming a high dielectric film 13a which is to be used as a gate insulating film 13 on a first electric conduction type semiconductor substrate 10; a step of forming an interface layer 13b between the substrate 10 and the dielectric film 13a by heat processing the substrate 10 in the atmosphere where hydrogen gas and oxygen gas are contained; a step of forming an electric conductive film which is to be used as a gate electrode 14 on the dielectric film 13a after forming the interface layer 13b; a step of forming a gate electrode 14 by processing an electric conductive film into a gate pattern; and a step of forming a source/drain regions 18 and 19 by doping second electric conduction type impurities into the substrate 10 using the gate electrode 14 as a mask. COPYRIGHT: (C)2007,JPO&INPIT