| 摘要 |
PROBLEM TO BE SOLVED: To dissolve the generation insufficiency of a two-dimensional electron gas layer near a source electrode. SOLUTION: The thickness of a first non p-type layer 104 is non-uniform due to the formation of a projection (center part 103a). That is, since the pn junction interface of a p-type semiconductor crystal layer 103 and the first non p-type layer 104 is raised higher than the other part under a gate electrode G, the thickness of the first non p-type layer 104 is thinner than the other part under the gate electrode G. Also, the end of the thick film of the first non p-type layer 104 is extended so as to burrow right under the peripheral edge of a gate insulation film 106. Then, by the structure, the upper end faceαof a depletion layer including a pn junction interface does not reach the interface of the first non p-type layer 104 and a second non p-type layer 105 near respective electrodes S and D for conduction. Also, the upper end faceαof the depletion layer enters the inside of the second non p-type layer 105 under the gate electrode G. COPYRIGHT: (C)2007,JPO&INPIT
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