| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and apparatus for depositing a semiconductor thin film capable of obtaining a crystalline semiconductor thin film with excellent film quality when forming the crystalline semiconductor thin film on a substrate. SOLUTION: The method of depositing the crystalline semiconductor thin film on the surface of the substrate supplies etching gas and film forming gas containing a semiconductor material to the heated substrate surface, so as to apply thermochemical reaction to the etching gas and the film forming gas on the substrate surface. The etching gas and the film forming gas are supplied to the whole substrate surface from a shower plate 17 oppositely arranged to the substrate surface and kept in a cooling state by a cooling pipe 18. COPYRIGHT: (C)2007,JPO&INPIT
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