发明名称 DYNAMIC BIAS CONTROL IN POWER AMPLIFIER
摘要 An RF output power amplifier (PA) of a cellular telephone includes first and second Class AB amplifier circuits. If the cellular telephone is to operate in a high power operating mode, then the first amplifier drives the PA output terminal. The power transistor(s) in the first amplifier is/are biased at a first DC current and a first DC voltage so as to optimize efficiency and linearity at high output powers. If the cellular telephone is to operate in a low power operating mode, then the second amplifier drives the output terminal. The power transistor(s) in the second amplifier is/are biased at a second DC current and a second DC voltage so as to optimize efficiency and linearity at low output powers. By sizing the power transistors in the amplifiers appropriately, emitter current densities are maintained substantially equal so that PA power gain is the same in the two operating modes.
申请公布号 WO2007109776(A2) 申请公布日期 2007.09.27
申请号 WO2007US64724 申请日期 2007.03.22
申请人 QUALCOMM INCORPORATED;DENG, JUNXIONG;GUDEM, PRASAD 发明人 DENG, JUNXIONG;GUDEM, PRASAD
分类号 H03F1/02 主分类号 H03F1/02
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