发明名称 SHARED METALLIC SOURCE/DRAIN CMOS CIRCUITS AND METHODS THEREOF
摘要 <p>A circuit includes a first transistor formed on the substrate and a second transistor formed on the substrate adjacent the first transistor. A source region of one of the first and second transistors and a drain region of the other one of the first and second transistors are the same and comprise substantially the same one or more materials.</p>
申请公布号 WO2007109658(A2) 申请公布日期 2007.09.27
申请号 WO2007US64384 申请日期 2007.03.20
申请人 ROCHESTER INSTITUTE OF TECHNOLOGY 发明人 VEGA, REINALDO
分类号 H01L27/01 主分类号 H01L27/01
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