| 摘要 |
<P>PROBLEM TO BE SOLVED: To enable to mount a high-photosensitivity photodiode for a monitor and a high-speed/high-performance transistor together on one and the same semiconductor substrate. <P>SOLUTION: A silicon substrate 1 is low-concentrated and of p-type. The photodiode for the monitor is formed by pn junction of a highly-concentrated n-type cathode layer 19 which is selectively formed on the silicon substrate 1. A light receiving element is composed of a first inclined plane 10, a second inclined plane 11, and a mirror basal plane 12 which are formed by etching the silicon substrate 1 in a micromirror part 3 for incident radiation from the first inclined plane 10. In this case, the first inclined plane 10 and the second inclined plane 11 form a predetermined angle with respect to the major surface of the silicon substrate 1. The mirror basal plane 12 is parallel to the major surface of the silicon substrate 1. A depletion layer 20a which is formed by pn junction between the silicon substrate 1 and the n-type cathode layer 19, and a depletion layer 20b which is formed of the first inclined plane 10, are connected. <P>COPYRIGHT: (C)2007,JPO&INPIT |
