MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device having a film with a flat surface on the surface of a semiconductor substrate having a convex on this surface wherein the thickness of the film is less than the height of the convex. SOLUTION: This manufacturing method comprises the steps of depositing a silicon oxide film 450 on the surface of the semiconductor substrate 100 having the convex 300 on this surface according to high density plasma chemical vapor deposition and etching the silicon oxide film according to isotropic etching so that the deposited silicon oxide film has a height less than that of the summit of the convex portion. COPYRIGHT: (C)2007,JPO&INPIT