| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for improving a transistor characteristic and to provide a manufacturing method of the semiconductor device. SOLUTION: The semiconductor device includes a projection-shape semiconductor layer 20 formed on a semiconductor substrate through an insulating film 10, a gate electrode 70 formed on both sides of a pair of confronted semiconductor layers through a gate insulating film, a channel region formed between the gate electrodes with silicon in the semiconductor layer, a source extension region and a drain extension region 140 which are formed on both sides of the channel region by silicon germanium or silicon carbon in the semiconductor layer, a source region 100 formed to be adjacent to an opposite side of the channel region in the source extension region by silicon, and a drain region 100 formed to be adjacent to an opposite side of the channel in the drain extension region by silicone in the semiconductor layer. COPYRIGHT: (C)2007,JPO&INPIT
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