| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a hollow part at a desired position in each element isolation region, and to provide its manufacturing method. SOLUTION: Floating gates FG are formed on a semiconductor substrate 11, and grooves 16-1 are formed in the semiconductor substrate 11 adjacent to the floating gates FG. An element isolation region STI is formed in the groove 16-1. The element isolation region STI includes the hollow part AG at least corresponding to the side surface of the floating gate FG. COPYRIGHT: (C)2007,JPO&INPIT
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