| 摘要 |
In the production of a semiconductor device in which a ferroelectric capacitor is used as a memory, a method of producing the semiconductor device in which the oxidation of a tungsten film embedded in an alignment mark prepared in the form of a groove is prevented includes forming an oxidation-preventing film composed of P-SiN (SiON) to cover the tungsten film prior to the formation of the ferroelectric capacitor, and heat-treating the oxidation-preventing film so as to thermally contract the film in advance.
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