发明名称 SUBSTRATE PROCESSING METHOD AND APPARATUS FABRICATION PROCESS OF A SEMICONDUCTOR DEVICE
摘要 A method for processing a substrate having an insulation film and a metal layer thereon comprises the steps of supplying a carboxylic acid anhydride to the substrate, and heating the substrate during the step of supplying the carboxylic acid anhydride to the substrate.
申请公布号 US2007224725(A1) 申请公布日期 2007.09.27
申请号 US20070687738 申请日期 2007.03.19
申请人 EBARA CORPORATION 发明人 MIYOSHI HIDENORI;ISHIKAWA KENJI;TAKIGAWA YUKIO;NAKATA YOSHIHIRO;TATEISHI HIDEKI
分类号 H01L51/40;H01L21/00 主分类号 H01L51/40
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