ZINC OXIDE BASED COMPOUND SEMICONDUCTOR, LIGHT-EMITTING ELEMENT USING THE SAME, AND MANUFACTURING METHODS THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a ZnO-based compound semiconductor that is improved in both of an activation rate and crystalline properties, in order to manufacture a semiconductor light-emitting element suitable as a light-emitting device.

SOLUTION: An n type ZnO-based compound semiconductor layer doped with n type impurity is grown on a substrate in the direction of positive c axis. Annealing is applied to the n type ZnO-based compound semiconductor layer, and the activation rate of the n type impurity is improved.

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