| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a next generation nonvolatile memory device which eliminates the need for erase processing while maintaining compatibility without adding any modification to host equipment which is premised on accessing to a flash memory device circulating a lot in markets already; and to provide a control method therefor. <P>SOLUTION: The nonvolatile memory device is controlled from the host equipment and has compatibility with the flash memory device, and comprises: nonvolatile memory permitting to rewrite bit data from "1" to "0" or from "0" to "1" in any direction by write processing; and a control circuit which, receiving an erase command from the host device and an erase place address information from the host equipment, performs write processing the data "1" in the whole area specified by the erase place address information on the nonvolatile memory. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
