Semiconductor memory in which error correction is performed by on-chip error correction circuit

摘要

A synchronous semiconductor memory which performs a pipeline operation includes an error correction circuit, an output circuit, and first and second write circuits. The first write circuit is configured to overwrite at least a portion of externally input write data on data read out from a memory cell and corrected by the error correction circuit, and write the overwritten data in the memory cell. The output circuit is configured to output the overwritten data outside a chip. The second write circuit is configured to reoverwrite at least a portion of write data which is externally input at a different time on the overwritten data, encode the reoverwritten data, and write the encoded data in the memory cell.