发明名称 Semiconductor memory device testing on/off state of on-die-termination circuit during data read mode, and test method of the state of on-die-termination circuit
摘要 A semiconductor memory device for testing whether an ODT circuit is on or off during a data read mode includes an on-die termination (ODT) circuit and an ODT state information output unit. The ODT circuit includes at least one ODT resistor. The ODT state information output unit outputs an ODT state information signal indicating whether the ODT circuit is on or off, in response to an ODT control signal during a data read mode when data is output from memory cells. With a semiconductor memory device and method capable of testing whether an ODT resistor is on or off during a data read mode, it is possible to test whether an ODT circuit is on or off during reading of data.
申请公布号 US2007222476(A1) 申请公布日期 2007.09.27
申请号 US20070717959 申请日期 2007.03.14
申请人 SAMSUNG ELECTRONICS, CO., LTD. 发明人 LEE HYONG-YONG
分类号 H03K19/003 主分类号 H03K19/003
代理机构 代理人
主权项
地址