发明名称 |
KORREKTURMASKE MIT LICHT ABSORBIERENDEN PHASENVERSCHIEBUNGSZONEN |
摘要 |
For lithographically producing the smallest structures at less than the exposure wavelengths in semiconductor fabrication, a double exposure is carried out using a thick phase mask and a trimming mask, the trimming mask further structures the phase-contrast lines produced by the phase mask. Besides transparent or opaque regions, the trimming mask also has phase-shifting regions. These surround transparent regions of the trimming mask through which the phase-contrast lines produced by the first mask are locally re-exposed, that is to say interrupted. The intensity profile of successive line sections is especially rich in contrast through the addition of the phase-shifting partially transparent regions on the second mask; the distances between the line sections can be reduced. The trimming mask, otherwise used only for larger structures, is therefore suitable for the configuration of the finest dimensionally critical structures. |
申请公布号 |
DE60032378(T2) |
申请公布日期 |
2007.09.27 |
申请号 |
DE2000632378T |
申请日期 |
2000.10.06 |
申请人 |
QIMONDA AG |
发明人 |
PFORR, REINER;FRIEDRICH, CHRISTOPH;ERGENZINGER, KLAUS;GANS, FRITZ;GRIESINGER, UWE;MAURER, WILHELM;KNOBLOCH, JUERGEN |
分类号 |
G03F1/00;G03F7/20;H01L21/027 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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