| 摘要 |
<p>A monolithically integrated optoelectronic component comprises a substrate (48) , and at least three optoelectronic sub-devices (41, 42, 43) integrated within a semiconductor layer on the substrate (48) . Each of the sub-devices (41, 42, 43) has an upper conductor (44) and a lower conductor (45, 46) separated by a common active region (49) , and two of the sub-devices (41, 43) are electrically coupled to a conducting semiconductor sub- layer (47) within the semiconductor layer by their upper or lower conductors. Electrical isolation zones (54, 55, 56) are provided for electrically isolating a further one of the sub-devices (42) from the semiconductor sub-layer (47) and from the coupled conductors of the sub-devices (41, 43) , and for electrically isolating the other conductors of the sub-devices (41, 43) from one another. The combined use of such electrical isolation zones enables more complex electrical connection schemes to be used than has previously been possible with conventional integrated optoelectronic components. Such electrical connection schemes can be independent of the physical ordering of the sub-devices on the substrate which is of course of significance in terms of the optical path through the sub-devices.</p> |
