发明名称 |
OXIDE SINTERED COMPACT, METHOD FOR MANUFACTURING THE SAME, METHOD FOR MANUFACTURING OXIDE TRANSPARENT CONDUCTIVE FILM, AND OXIDE TRANSPARENT CONDUCTIVE FILM |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide sintered compact with which crazing and cracking do not occur in spite of feeding of a large amount of energies in manufacturing the oxide transparent conductive film by a vacuum vapor deposition method, such as an electron beam vapor deposition method, ion plating method, high-density plasma-assisted vapor deposition method or the like. <P>SOLUTION: The oxide sintered compact contains an indium oxide formed by solid-solubilizing molybdenum, in which the molybdenum is contained at ≥0.001 and ≤0.060 in the ratio of molybdenum atoms to indium, the density is ≥3.7 g/cm<SP>3</SP>and ≤6.5 g/cm<SP>3</SP>, and a metal phase and a crystal phase of a molybdenum oxide are not included. <P>COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2007246318(A) |
申请公布日期 |
2007.09.27 |
申请号 |
JP20060070322 |
申请日期 |
2006.03.15 |
申请人 |
SUMITOMO METAL MINING CO LTD |
发明人 |
ABE TAKAYUKI;NAKAYAMA NORIYUKI;OBARA TAKESHI;WAKE RIICHIRO |
分类号 |
C04B35/00;C23C14/08;H01B5/14;H01B13/00 |
主分类号 |
C04B35/00 |
代理机构 |
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代理人 |
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