发明名称 OXIDE SINTERED COMPACT, METHOD FOR MANUFACTURING THE SAME, METHOD FOR MANUFACTURING OXIDE TRANSPARENT CONDUCTIVE FILM, AND OXIDE TRANSPARENT CONDUCTIVE FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide an oxide sintered compact with which crazing and cracking do not occur in spite of feeding of a large amount of energies in manufacturing the oxide transparent conductive film by a vacuum vapor deposition method, such as an electron beam vapor deposition method, ion plating method, high-density plasma-assisted vapor deposition method or the like. <P>SOLUTION: The oxide sintered compact contains an indium oxide formed by solid-solubilizing molybdenum, in which the molybdenum is contained at &ge;0.001 and &le;0.060 in the ratio of molybdenum atoms to indium, the density is &ge;3.7 g/cm<SP>3</SP>and &le;6.5 g/cm<SP>3</SP>, and a metal phase and a crystal phase of a molybdenum oxide are not included. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007246318(A) 申请公布日期 2007.09.27
申请号 JP20060070322 申请日期 2006.03.15
申请人 SUMITOMO METAL MINING CO LTD 发明人 ABE TAKAYUKI;NAKAYAMA NORIYUKI;OBARA TAKESHI;WAKE RIICHIRO
分类号 C04B35/00;C23C14/08;H01B5/14;H01B13/00 主分类号 C04B35/00
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